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DMP2004VK
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
* * * * * * * * * Dual P-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage VGS(TH) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Gate "Green" Device (Note 3)
Mechanical Data
* * * * * * * * Case: SOT-563 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate)
SOT-563
D2
G1
S1
S2
G2
D1
ESD protected
TOP VIEW
BOTTOM VIEW
TOP VIEW Internal Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 8 -530 -1.8 Units V V mA A
Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) VGS = -4.5V Pulsed Drain Current
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol PD RJA TJ, TSTG Value 400 312.5 -65 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient, Note 1 Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes:
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min -20 -0.5 200 -0.5 Typ 0.7 1.1 1.7 Max -1.0 1.0 -1.0 0.9 1.4 2.0 -1.2 175 30 20 Unit V A A V mS V pF pF pF Test Condition VGS = 0V, ID = -250mA VDS = -20V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = -10V, ID = -0.2A VGS = 0V, IS = 115mA VDS = -16V, VGS = 0V f = 1.0MHz
1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect.
DMP2004VK
Document number: DS30916 Rev. 4 - 2
1 of 5 www.diodes.com
June 2010
(c) Diodes Incorporated
DMP2004VK
-ID, DRAIN CURRENT (A)
0
0 -VDS, DRAIN SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
-VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
-VGS(th), GATE THRESHOLD VOLTAGE (V)
TA, AMBIENT TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () -ID, DRAIN-SOURCE CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
-ID, DRAIN CURRENT (A)
10
-ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
-ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current
DMP2004VK
Document number: DS30916 Rev. 4 - 2
2 of 5 www.diodes.com
June 2010
(c) Diodes Incorporated
DMP2004VK
TA, AMBIENT TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature
-VDS, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
-ID, DRAIN-CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain-Current
-VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance
Ordering Information (Note 5)
Part Number DMP2004VK-7
Notes:
Case SOT-563
Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PAB = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September)
PAB
YM
Date Code Key Year Code Month Code Jan 1
2007 U Feb 2 Mar 3
2008 V Apr 4 May 5
2009 W Jun 6 Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
DMP2004VK
Document number: DS30916 Rev. 4 - 2
3 of 5 www.diodes.com
June 2010
(c) Diodes Incorporated
DMP2004VK
Package Outline Dimensions
A
B
C
D G
K
M
SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm
H L
Suggested Pad Layout
C2
C2
Z
G
C1
Y X
Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5
DMP2004VK
Document number: DS30916 Rev. 4 - 2
4 of 5 www.diodes.com
June 2010
(c) Diodes Incorporated
DMP2004VK
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMP2004VK
Document number: DS30916 Rev. 4 - 2
5 of 5 www.diodes.com
June 2010
(c) Diodes Incorporated

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